PJQ5948V-AU_R2_002A1 Panjit International Inc.
Виробник: Panjit International Inc.Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 32W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 32.6 грн |
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Технічний опис PJQ5948V-AU_R2_002A1 Panjit International Inc.
Description: MOSFET 2N-CH 40V 10.5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W (Ta), 32W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V, Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: DFN5060B-8, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PJQ5948V-AU_R2_002A1 за ціною від 28.96 грн до 86.8 грн
| Фото | Назва | Виробник | Інформація |
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PJQ5948V-AU_R2_002A1 | Виробник : Panjit International Inc. |
Description: MOSFET 2N-CH 40V 10.5A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 32W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060B-8 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJQ5948V-AU_R2_002A1 | Виробник : Panjit |
MOSFET 40V Dual N-Channel Enhancement Mode MOSFET |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJQ5948V-AU_R2_002A1 | Виробник : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 35A; Idm: 140A; 32W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 140A Power dissipation: 32W Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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PJQ5948V-AU_R2_002A1 | Виробник : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 35A; Idm: 140A; 32W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 140A Power dissipation: 32W Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |