PJS6416_S1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2W (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
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Технічний опис PJS6416_S1_00001 Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 2W (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Rds On (Max) @ Id, Vgs: 27mOhm @ 7.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції PJS6416_S1_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PJS6416_S1_00001 | Виробник : Panjit |
MOSFETs 20V N-Channel Enhancement Mode MOSFET |
товару немає в наявності |
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PJS6416-S1-00001 | Виробник : Panjit |
MOSFETs |
товару немає в наявності |