PJS6417_S1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис PJS6417_S1_00001 Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M, Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції PJS6417_S1_00001 за ціною від 8.10 грн до 47.66 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PJS6417_S1_00001 | Panjit International Inc. |
Description: 20V P-CHANNEL ENHANCEMENT MODE MInput Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 5707 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
PJS6417_S1_00001 | Panjit |
MOSFETs 20V P-Channel Enhancement Mode MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
|
| PJS6417_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 5707 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.64 грн |
| 12+ | 25.34 грн |
| 100+ | 17.60 грн |
| 500+ | 12.89 грн |
| 1000+ | 10.48 грн |
| PJS6417_S1_00001 |
![]() |
Виробник: Panjit
MOSFETs 20V P-Channel Enhancement Mode MOSFET
MOSFETs 20V P-Channel Enhancement Mode MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.66 грн |
| 12+ | 29.07 грн |
| 100+ | 16.27 грн |
| 500+ | 12.29 грн |
| 1000+ | 11.03 грн |
| 3000+ | 8.94 грн |
| 6000+ | 8.10 грн |



