PJS6601-AU_S1_000A1 Panjit International Inc.
Виробник: Panjit International Inc.Description: MOSFET N/P-CH 20V 4.1A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2492 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 54.12 грн |
| 10+ | 32.34 грн |
| 100+ | 20.81 грн |
| 500+ | 14.86 грн |
| 1000+ | 13.36 грн |
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Технічний опис PJS6601-AU_S1_000A1 Panjit International Inc.
Description: MOSFET N/P-CH 20V 4.1A SOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V, Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції PJS6601-AU_S1_000A1
| Фото | Назва | Виробник | Інформація |
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PJS6601-AU_S1_000A1 | Виробник : Panjit International Inc. |
Description: MOSFET N/P-CH 20V 4.1A SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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