PJS6601-AU_S1_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET N/P-CH 20V 4.1A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.30 грн |
| 10+ | 31.85 грн |
| 100+ | 20.49 грн |
| 500+ | 14.64 грн |
| 1000+ | 13.16 грн |
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Технічний опис PJS6601-AU_S1_000A1 Panjit International Inc.
Description: MOSFET N/P-CH 20V 4.1A SOT23-6, Part Status: Active, Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.25W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції PJS6601-AU_S1_000A1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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PJS6601-AU_S1_000A1 | Panjit International Inc. |
Description: MOSFET N/P-CH 20V 4.1A SOT23-6 Part Status: Active Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.25W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
 |
PJS6601-AU_S1_000A1 | Panjit |
MOSFET 20V Complementary Enhancement Mode MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
PJS6601-AU-S1-000A1 | Panjit |
MOSFET SOT23-6L/MOS/SOT/NFET-20TLNP |
товару немає в наявності |
В кошику од. на суму грн. |
| PJS6601-AU_S1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| PJS6601-AU_S1_000A1 |
|
Виробник: Panjit International Inc.
Description: MOSFET N/P-CH 20V 4.1A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N/P-CH 20V 4.1A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJS6601-AU_S1_000A1 |
|
Виробник: Panjit
MOSFET 20V Complementary Enhancement Mode MOSFET
MOSFET 20V Complementary Enhancement Mode MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| PJS6601-AU-S1-000A1 |
|
Виробник: Panjit
MOSFET SOT23-6L/MOS/SOT/NFET-20TLNP
MOSFET SOT23-6L/MOS/SOT/NFET-20TLNP
товару немає в наявності
В кошику
од. на суму грн.
| PJS6601-AU_S1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.