PJS6601-AU_S1_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET N/P-CH 20V 4.1A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 6+ | 53.20 грн |
| 10+ | 31.79 грн |
| 100+ | 20.45 грн |
| 500+ | 14.61 грн |
| 1000+ | 13.13 грн |
Відгуки про товар
Написати відгук
Технічний опис PJS6601-AU_S1_000A1 Panjit International Inc.
Description: MOSFET N/P-CH 20V 4.1A SOT23-6, Part Status: Active, Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.25W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції PJS6601-AU_S1_000A1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
PJS6601-AU_S1_000A1 | Виробник : Panjit International Inc. |
Description: MOSFET N/P-CH 20V 4.1A SOT23-6 Part Status: Active Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.25W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
|
 |
PJS6601-AU_S1_000A1 | Виробник : Panjit |
MOSFET 20V Complementary Enhancement Mode MOSFET |
товару немає в наявності |
|
|
|
PJS6601-AU-S1-000A1 | Виробник : Panjit |
MOSFET SOT23-6L/MOS/SOT/NFET-20TLNP |
товару немає в наявності |
|
| PJS6601-AU_S1_000A1 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |