PJT138K_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 236mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Технічний опис PJT138K_R1_00001 Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT363, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), Drain to Source Voltage (Vdss): 50V, Power - Max: 236mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції PJT138K_R1_00001 за ціною від 1.75 грн до 14.01 грн
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PJT138K_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 50V 0.36A SOT363 Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drain to Source Voltage (Vdss): 50V Power - Max: 236mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 9484 шт: термін постачання 21-31 дні (днів) |
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PJT138K_R1_00001 | Panjit |
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected |
на замовлення 44484 шт: термін постачання 21-30 дні (днів) |
|
| PJT138K_R1_00001 |
|
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 236mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 50V 0.36A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 236mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 9484 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.00 грн |
| 41+ | 7.49 грн |
| 100+ | 3.87 грн |
| PJT138K_R1_00001 |
|
Виробник: Panjit
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
на замовлення 44484 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 14.01 грн |
| 38+ | 8.67 грн |
| 100+ | 4.26 грн |
| 500+ | 3.49 грн |
| 1000+ | 3.07 грн |
| 3000+ | 1.75 грн |