PJT7600_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.13 грн |
| 6000+ | 8.43 грн |
| 9000+ | 7.58 грн |
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Технічний опис PJT7600_R1_00001 Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V, Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Інші пропозиції PJT7600_R1_00001 за ціною від 7.79 грн до 33.32 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PJT7600_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Mounting: SMD Case: SOT363 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 1A/-700mA Gate charge: 1.6/2.2nC On-state resistance: 400/600mΩ Power dissipation: 0.35W Gate-source voltage: ±8V |
на замовлення 2685 шт: термін постачання 14-30 дні (днів) |
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PJT7600_R1_00001 | Panjit International Inc. |
Description: 20V COMPLEMENTARY ENHANCEMENT MO Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 13124 шт: термін постачання 21-31 дні (днів) |
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PJT7600_R1_00001 | Panjit |
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected |
на замовлення 3484 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJT7600_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
на замовлення 2685 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.14 грн |
| 23+ | 18.41 грн |
| 100+ | 11.61 грн |
| 500+ | 8.79 грн |
| 1000+ | 7.79 грн |
| PJT7600_R1_00001 |
|
Виробник: Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: 20V COMPLEMENTARY ENHANCEMENT MO
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 13124 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.32 грн |
| 12+ | 25.30 грн |
| 100+ | 15.17 грн |
| 500+ | 13.18 грн |
| 1000+ | 8.96 грн |
| PJT7600_R1_00001 |
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Виробник: Panjit
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected
на замовлення 3484 шт:
термін постачання 21-30 дні (днів)