PJT7601_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.88 грн |
| 6000+ | 9.03 грн |
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Технічний опис PJT7601_R1_00001 Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, 1.2V Drive, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції PJT7601_R1_00001 за ціною від 9.98 грн до 29.45 грн
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PJT7601_R1_00001 | Panjit International Inc. |
Description: 20V COMPLEMENTARY ENHANCEMENT MO FET Feature: Logic Level Gate, 1.2V Drive Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA |
на замовлення 8421 шт: термін постачання 21-31 дні (днів) |
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PJT7601_R1_00001 | Panjit |
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected |
на замовлення 3352 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJT7601_R1_00001 |
|
Виробник: Panjit International Inc.
Description: 20V COMPLEMENTARY ENHANCEMENT MO
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: 20V COMPLEMENTARY ENHANCEMENT MO
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
на замовлення 8421 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.45 грн |
| 13+ | 24.10 грн |
| 100+ | 16.76 грн |
| 500+ | 12.28 грн |
| 1000+ | 9.98 грн |
| PJT7601_R1_00001 |
|
Виробник: Panjit
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected
MOSFETs 20V Complementary Enhancement Mode MOSFETESD Protected
на замовлення 3352 шт:
термін постачання 21-30 дні (днів)