PJT7603_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET N/P-CH 50V 0.4A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: SOT-363
| Кількість | Ціна |
|---|---|
| 3000+ | 5.69 грн |
| 6000+ | 5.07 грн |
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Технічний опис PJT7603_R1_00001 Panjit International Inc.
Description: MOSFET N/P-CH 50V 0.4A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA, Supplier Device Package: SOT-363.
Інші пропозиції PJT7603_R1_00001 за ціною від 4.38 грн до 30.51 грн
| Фото | Назва | Виробник | Інформація |
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PJT7603_R1_00001 | Виробник : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V Mounting: SMD Case: SOT363 Kind of package: reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: -250/400mA Gate charge: 0.95/1.1nC On-state resistance: 2.5/6Ω Power dissipation: 0.35W Gate-source voltage: ±20V |
на замовлення 2750 шт: термін постачання 14-30 дні (днів) |
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PJT7603_R1_00001 | Виробник : Panjit |
MOSFETs Complementary Enhancement Mode MOSFETESD Protected |
на замовлення 3383 шт: термін постачання 21-30 дні (днів) |
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PJT7603_R1_00001 | Виробник : Panjit International Inc. |
Description: MOSFET N/P-CH 50V 0.4A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA Supplier Device Package: SOT-363 |
на замовлення 8978 шт: термін постачання 21-31 дні (днів) |
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PJT7603-R1-00001 | Виробник : Panjit |
MOSFET SOT-363/MOS/SOT/NFET-60TSNP |
товару немає в наявності |