PJT7800_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.91 грн |
| 6000+ | 7.45 грн |
| 9000+ | 6.60 грн |
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Технічний опис PJT7800_R1_00001 Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363, Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції PJT7800_R1_00001 за ціною від 5.24 грн до 35.73 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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PJT7800_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363 Mounting: SMD Pulsed drain current: 4A Power dissipation: 0.35W Gate charge: 1.6nC Polarisation: unipolar Drain current: 1A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: SOT363 On-state resistance: 0.4Ω |
на замовлення 5968 шт: термін постачання 14-30 дні (днів) |
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PJT7800_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 1A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 16525 шт: термін постачання 21-31 дні (днів) |
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PJT7800_R1_00001 | Panjit |
MOSFET 20V N-Channel Enhancement Mode MOSFETESD Protected |
на замовлення 12960 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| PJT7800_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT363
On-state resistance: 0.4Ω
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT363
On-state resistance: 0.4Ω
на замовлення 5968 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.84 грн |
| 60+ | 6.98 грн |
| 100+ | 6.40 грн |
| 250+ | 6.15 грн |
| 500+ | 5.82 грн |
| 1000+ | 5.32 грн |
| 3000+ | 5.24 грн |
| PJT7800_R1_00001 |
|
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 16525 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.73 грн |
| 13+ | 24.46 грн |
| 100+ | 12.34 грн |
| 500+ | 10.26 грн |
| 1000+ | 7.99 грн |
| PJT7800_R1_00001 |
|
Виробник: Panjit
MOSFET 20V N-Channel Enhancement Mode MOSFETESD Protected
MOSFET 20V N-Channel Enhancement Mode MOSFETESD Protected
на замовлення 12960 шт:
термін постачання 21-30 дні (днів)