PJT7801_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET 2P-CH 20V 0.7A SOT363
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
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Технічний опис PJT7801_R1_00001 Panjit International Inc.
Description: MOSFET 2P-CH 20V 0.7A SOT363, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount.
Інші пропозиції PJT7801_R1_00001 за ціною від 5.14 грн до 35.72 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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PJT7801_R1_00001 | Panjit International Inc. |
Description: MOSFET 2P-CH 20V 0.7A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 8570 шт: термін постачання 21-31 дні (днів) |
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PJT7801_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW Mounting: SMD Case: SOT363 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -2.8A Drain current: -0.7A Gate charge: 2.2nC On-state resistance: 0.6Ω Power dissipation: 0.35W Gate-source voltage: ±8V |
на замовлення 2845 шт: термін постачання 14-30 дні (днів) |
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| PJT7801_R1_00001 |
|
Виробник: Panjit International Inc.
Description: MOSFET 2P-CH 20V 0.7A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 0.7A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 8570 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 13+ | 24.10 грн |
| 100+ | 12.16 грн |
| 500+ | 10.11 грн |
| 1000+ | 7.87 грн |
| PJT7801_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.8A
Drain current: -0.7A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.8A
Drain current: -0.7A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
на замовлення 2845 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.72 грн |
| 26+ | 16.00 грн |
| 58+ | 7.21 грн |
| 100+ | 6.47 грн |
| 250+ | 5.97 грн |
| 500+ | 5.47 грн |
| 1000+ | 5.14 грн |