PJT7812_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.5A SOT363
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Технічний опис PJT7812_R1_00001 Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.5A SOT363, Part Status: Not For New Designs, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції PJT7812_R1_00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
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PJT7812_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 30V 0.5A SOT363 Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Not For New Designs Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PJT7812_R1_00001 | Panjit |
MOSFETs 30V N-Channel Enhancement Mode MOSFETESD Protected |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
|
PJT7812-R1-00001 | Panjit |
MOSFETs |
товару немає в наявності |
В кошику од. на суму грн. |
| PJT7812_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -250mA Case: SOT363 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| PJT7812_R1_00001 |
|
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.5A SOT363
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Description: MOSFET 2N-CH 30V 0.5A SOT363
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
товару немає в наявності
В кошику
од. на суму грн.
| PJT7812_R1_00001 |
|
Виробник: Panjit
MOSFETs 30V N-Channel Enhancement Mode MOSFETESD Protected
MOSFETs 30V N-Channel Enhancement Mode MOSFETESD Protected
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJT7812_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.