PJT7838_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
| Кількість | Ціна |
|---|---|
| 3000+ | 8.78 грн |
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Технічний опис PJT7838_R1_00001 Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M, Power - Max: 350mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Drain to Source Voltage (Vdss): 50V.
Інші пропозиції PJT7838_R1_00001 за ціною від 5.35 грн до 39.90 грн
| Фото | Назва | Виробник | Інформація |
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PJT7838_R1_00001 | Виробник : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW Mounting: SMD Case: SOT363 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Pulsed drain current: 1.2A Drain current: 0.4A Gate charge: 0.95nC On-state resistance: 6Ω Power dissipation: 0.35W Gate-source voltage: ±20V |
на замовлення 7648 шт: термін постачання 14-30 дні (днів) |
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PJT7838_R1_00001 | Виробник : Panjit |
MOSFETs 50V N-Channel Enhancement Mode MOSFET |
на замовлення 864 шт: термін постачання 21-30 дні (днів) |
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PJT7838_R1_00001 | Виробник : Panjit International Inc. |
Description: 50V N-CHANNEL ENHANCEMENT MODE M Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drain to Source Voltage (Vdss): 50V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V |
на замовлення 7895 шт: термін постачання 21-31 дні (днів) |
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