PJT7872B_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: MOSFET 2N-CH 60V 0.25A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 2047 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.64 грн |
| 23+ | 13.46 грн |
| 100+ | 9.02 грн |
| 500+ | 6.52 грн |
| 1000+ | 5.87 грн |
Відгуки про товар
Написати відгук
Технічний опис PJT7872B_R1_00001 Panjit International Inc.
Description: MOSFET 2N-CH 60V 0.25A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V, Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Інші пропозиції PJT7872B_R1_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
PJT7872B_R1_00001 | Виробник : Panjit International Inc. |
Description: MOSFET 2N-CH 60V 0.25A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
товару немає в наявності |
|
 |
PJT7872B_R1_00001 | Виробник : Panjit |
MOSFET 60V N-Channel Enhancement Mode MOSFET |
товару немає в наявності |