PJW2P10A_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 100V P-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 10+ | 33.64 грн |
| 11+ | 27.80 грн |
| 100+ | 20.73 грн |
| 500+ | 15.29 грн |
| 1000+ | 11.81 грн |
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Технічний опис PJW2P10A_R2_00001 Panjit International Inc.
Description: 100V P-CHANNEL ENHANCEMENT MODE, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції PJW2P10A_R2_00001
| Фото | Назва | Виробник | Інформація |
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PJW2P10A_R2_00001 | Виробник : Panjit International Inc. |
Description: 100V P-CHANNEL ENHANCEMENT MODE Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
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PJW2P10A_R2_00001 | Виробник : Panjit |
MOSFET 100V P-Channel Enhancement Mode MOSFET |
товару немає в наявності |