PJW3N10A_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 12.03 грн |
| 5000+ | 10.84 грн |
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Технічний опис PJW3N10A_R2_00001 Panjit International Inc.
Description: 100V N-CHANNEL ENHANCEMENT MODE, Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції PJW3N10A_R2_00001 за ціною від 11.92 грн до 33.64 грн
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PJW3N10A_R2_00001 | Виробник : Panjit International Inc. |
Description: 100V N-CHANNEL ENHANCEMENT MODE Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 12480 шт: термін постачання 21-31 дні (днів) |
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PJW3N10A_R2_00001 | Виробник : Panjit |
MOSFETs 100V N-Channel Enhancement Mode MOSFET |
товару немає в наявності |