PJW5N06A-AU_R2_000A1 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.72W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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Технічний опис PJW5N06A-AU_R2_000A1 Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.72W (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції PJW5N06A-AU_R2_000A1
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PJW5N06A-AU_R2_000A1 | Виробник : Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.72W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
товару немає в наявності |
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PJW5N06A-AU_R2_000A1 | Виробник : Panjit |
MOSFETs 60V N-Channel Enhancement Mode MOSFET |
товару немає в наявності |
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| PJW5N06A-AU-R2-000A1 | Виробник : Panjit | Array |
товару немає в наявності |