PJX8804_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.6A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V
Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Технічний опис PJX8804_R1_00001 Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.6A SOT563, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V, Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 300mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Інші пропозиції PJX8804_R1_00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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PJX8804_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 30V 0.6A SOT563 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 300mW (Ta) |
товару немає в наявності |
В кошику од. на суму грн. |
| PJX8804_R1_00001 |
|
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.6A SOT563
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V
Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW (Ta)
Description: MOSFET 2N-CH 30V 0.6A SOT563
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V
Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW (Ta)
товару немає в наявності
В кошику
од. на суму грн.