PJX8805_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET 2P-CH 30V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-563
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Технічний опис PJX8805_R1_00001 Panjit International Inc.
Description: MOSFET 2P-CH 30V 0.5A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V, Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-563.
Інші пропозиції PJX8805_R1_00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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PJX8805_R1_00001 | Panjit International Inc. |
Description: MOSFET 2P-CH 30V 0.5A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PJX8805_R1_00001 | Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PJX8805_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563 Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Gate-source voltage: 10V Kind of package: reel; tape Case: SOT563 Mounting: SMD Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| PJX8805_R1_00001 |
|
Виробник: Panjit International Inc.
Description: MOSFET 2P-CH 30V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2P-CH 30V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-563
товару немає в наявності
В кошику
од. на суму грн.
| PJX8805_R1_00001 |
|
Виробник: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
MOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
товару немає в наявності
В кошику
од. на суму грн.
| PJX8805_R1_00001 |
|
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.