PJX8808_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT563
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-563
| Кількість | Ціна |
|---|---|
| 8+ | 40.06 грн |
| 13+ | 24.13 грн |
| 100+ | 15.39 грн |
| 500+ | 10.86 грн |
| 1000+ | 9.71 грн |
| 2000+ | 8.74 грн |
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Технічний опис PJX8808_R1_00001 Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT563, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 900mV @ 250µA, FET Feature: Logic Level Gate, 1.2V Drive, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 300mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Part Status: Active.
Інші пропозиції PJX8808_R1_00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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PJX8808_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.5A SOT563 Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate, 1.2V Drive Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 300mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| PJX8808_R1_00001 |
|
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Description: MOSFET 2N-CH 20V 0.5A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.