Технічний опис PMBFJ111,215 NXP
Description: JFET N-CH 40V SOT23, Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V, Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA, Resistance - RDS(On): 30 Ohms, Power - Max: 300 mW, Drain to Source Voltage (Vdss): 40 V, Part Status: Obsolete, Supplier Device Package: SOT-23 (TO-236AB), Voltage - Breakdown (V(BR)GSS): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS), FET Type: N-Channel, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції PMBFJ111,215
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PMBFJ111,215 | Виробник : NXP USA Inc. |
 Description: JFET N-CH 40V SOT23Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA Resistance - RDS(On): 30 Ohms Power - Max: 300 mW Drain to Source Voltage (Vdss): 40 V Part Status: Obsolete Supplier Device Package: SOT-23 (TO-236AB) Voltage - Breakdown (V(BR)GSS): 40 V Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS) FET Type: N-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |