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PMBFJ174,215

PMBFJ174,215 NXP USA Inc.

PMBFJ174_175_176_177_CNV.pdf
Виробник: NXP USA Inc.
Description: JFET P-CH 30V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Resistance - RDS(On): 85 Ohms
Power - Max: 300 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
FET Type: P-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис PMBFJ174,215 NXP USA Inc.

Description: JFET P-CH 30V SOT23, Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V, Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA, Resistance - RDS(On): 85 Ohms, Power - Max: 300 mW, Drain to Source Voltage (Vdss): 30 V, Part Status: Obsolete, Supplier Device Package: SOT-23 (TO-236AB), Voltage - Breakdown (V(BR)GSS): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS), FET Type: P-Channel, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).