Технічний опис PMBFJ176,215 NXP
Description: JFET P-CH 30V SOT23, Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V, Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA, Resistance - RDS(On): 250 Ohms, Power - Max: 300 mW, Drain to Source Voltage (Vdss): 30 V, Part Status: Obsolete, Supplier Device Package: SOT-23 (TO-236AB), Voltage - Breakdown (V(BR)GSS): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS), FET Type: P-Channel, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції PMBFJ176,215
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
PMBFJ176,215 | NXP USA Inc. |
 Description: JFET P-CH 30V SOT23Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA Resistance - RDS(On): 250 Ohms Power - Max: 300 mW Drain to Source Voltage (Vdss): 30 V Part Status: Obsolete Supplier Device Package: SOT-23 (TO-236AB) Voltage - Breakdown (V(BR)GSS): 30 V Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS) FET Type: P-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PMBFJ176,215 | NXP Semiconductors |
JFET JFET P-CH 30V 1MA |
товару немає в наявності |
В кошику од. на суму грн. |
| PMBFJ176,215 |
|
Виробник: NXP USA Inc.
Description: JFET P-CH 30V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Resistance - RDS(On): 250 Ohms
Power - Max: 300 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
FET Type: P-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: JFET P-CH 30V SOT23
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Resistance - RDS(On): 250 Ohms
Power - Max: 300 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
FET Type: P-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| PMBFJ176,215 |
|
Виробник: NXP Semiconductors
JFET JFET P-CH 30V 1MA
JFET JFET P-CH 30V 1MA
товару немає в наявності
В кошику
од. на суму грн.