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PMBT2222AYS115

PMBT2222AYS115 NXP USA Inc.


PMBT2222AYS.pdf
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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Технічний опис PMBT2222AYS115 NXP USA Inc.

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN, Operating Temperature: 150°C (TJ), Power - Max: 250mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V, Frequency - Transition: 300MHz, Supplier Device Package: 6-TSSOP, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.