PMBT2222AYS115 NXP
Виробник: NXPDescription: NXP - PMBT2222AYS115 - INTEGRATED PASSIVE FILTERS
tariffCode: 85412900
euEccn: NLR
hazardous: false
rohsCompliant: YES
productTraceability: No
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
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Технічний опис PMBT2222AYS115 NXP
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN, Operating Temperature: 150°C (TJ), Power - Max: 250mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V, Frequency - Transition: 300MHz, Supplier Device Package: 6-TSSOP, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PMBT2222AYS115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PMBT2222AYS115 | Виробник : NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V Frequency - Transition: 300MHz Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |