PMCM4401VNEAZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 12V 4.7A 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
| Кількість | Ціна без ПДВ |
|---|---|
| 9000+ | 7.01 грн |
| 18000+ | 6.68 грн |
| 27000+ | 6.58 грн |
| 45000+ | 6.12 грн |
| 63000+ | 6.01 грн |
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Технічний опис PMCM4401VNEAZ Nexperia USA Inc.
Description: MOSFET N-CH 12V 4.7A 4WLCSP, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V, Power Dissipation (Max): 400mW (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 4-WLCSP (0.78x0.78), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V.
Інші пропозиції PMCM4401VNEAZ за ціною від 6.28 грн до 38.06 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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PMCM4401VNEAZ | Nexperia |
MOSFET PMCM4401VNE/NAX000/NONE |
на замовлення 21061 шт: термін постачання 21-30 дні (днів) |
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PMCM4401VNEAZ | Nexperia USA Inc. |
Description: MOSFET N-CH 12V 4.7A 4WLCSP Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: 4-WLCSP (0.78x0.78) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 400mW (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Packaging: Cut Tape (CT) |
на замовлення 85820 шт: термін постачання 21-31 дні (днів) |
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| PMCM4401VNEAZ |
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Виробник: Nexperia
MOSFET PMCM4401VNE/NAX000/NONE
MOSFET PMCM4401VNE/NAX000/NONE
на замовлення 21061 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 31.49 грн |
| 13+ | 24.45 грн |
| 100+ | 11.67 грн |
| 1000+ | 7.32 грн |
| 2500+ | 7.25 грн |
| 9000+ | 6.56 грн |
| 18000+ | 6.28 грн |
| PMCM4401VNEAZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 12V 4.7A 4WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (0.78x0.78)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 12V 4.7A 4WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (0.78x0.78)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
на замовлення 85820 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.06 грн |
| 13+ | 24.53 грн |
| 100+ | 12.10 грн |
| 500+ | 10.45 грн |
| 1000+ | 8.77 грн |
| 2000+ | 8.27 грн |