| Кількість | Ціна |
|---|---|
| 18+ | 18.17 грн |
| 29+ | 11.16 грн |
| 100+ | 8.03 грн |
| 9000+ | 6.91 грн |
| 45000+ | 5.52 грн |
Відгуки про товар
Написати відгук
Технічний опис PMCM4402UPEZ Nexperia
Description: MOSFET P-CH 20V 4WLCSP, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj), Power Dissipation (Max): 400mW, Supplier Device Package: 4-WLCSP (0.78x0.78), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V.
Інші пропозиції PMCM4402UPEZ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
PMCM4402UPEZ | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4WLCSPPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj) Power Dissipation (Max): 400mW Supplier Device Package: 4-WLCSP (0.78x0.78) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V |
товару немає в наявності |
Мінімальне замовлення: 9000 шт В кошику од. на суму грн. |
|
PMCM4402UPEZ | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4WLCSPGate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 4-WLCSP (0.78x0.78) Power Dissipation (Max): 400mW Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| PMCM4402UPEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
Power Dissipation (Max): 400mW
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Description: MOSFET P-CH 20V 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
Power Dissipation (Max): 400mW
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику
од. на суму грн.
| PMCM4402UPEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4WLCSP
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (0.78x0.78)
Power Dissipation (Max): 400mW
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 4WLCSP
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (0.78x0.78)
Power Dissipation (Max): 400mW
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.




