PMCM6501UPEZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj)
Power Dissipation (Max): 556mW
Supplier Device Package: 6-WLCSP (1.48x0.98)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V
Description: MOSFET P-CH 20V 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj)
Power Dissipation (Max): 556mW
Supplier Device Package: 6-WLCSP (1.48x0.98)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4500+ | 14.46 грн |
9000+ | 12.21 грн |
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Технічний опис PMCM6501UPEZ Nexperia USA Inc.
Description: MOSFET P-CH 20V 6WLCSP, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj), Power Dissipation (Max): 556mW, Supplier Device Package: 6-WLCSP (1.48x0.98), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V.
Інші пропозиції PMCM6501UPEZ за ціною від 13.06 грн до 38.18 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PMCM6501UPEZ | Виробник : Nexperia | MOSFET PMCM6501UPE/NAX000/NONE |
на замовлення 7062 шт: термін постачання 21-30 дні (днів) |
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PMCM6501UPEZ | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 6WLCSP Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj) Power Dissipation (Max): 556mW Supplier Device Package: 6-WLCSP (1.48x0.98) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V |
на замовлення 12278 шт: термін постачання 21-31 дні (днів) |
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PMCM6501UPEZ | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.5A; Idm: -22A Drain-source voltage: -20V Drain current: -3.5A Case: WLCSP6 Polarisation: unipolar On-state resistance: 43mΩ Pulsed drain current: -22A Technology: Trench Kind of channel: enhanced Gate charge: 29nC Gate-source voltage: ±8V Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Mounting: SMD Type of transistor: P-MOSFET кількість в упаковці: 4500 шт |
товар відсутній |
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PMCM6501UPEZ | Виробник : NEXPERIA | Trans MOSFET P-CH 20V 5.6A 6-Pin WLCSP T/R |
товар відсутній |
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PMCM6501UPEZ | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.5A; Idm: -22A Drain-source voltage: -20V Drain current: -3.5A Case: WLCSP6 Polarisation: unipolar On-state resistance: 43mΩ Pulsed drain current: -22A Technology: Trench Kind of channel: enhanced Gate charge: 29nC Gate-source voltage: ±8V Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Mounting: SMD Type of transistor: P-MOSFET |
товар відсутній |