Інші пропозиції PMCPB5530X,115 транзистор
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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PMCPB5530X,115 | Nexperia USA Inc. |
 Description: MOSFET N/P-CH 20V 4A 6HUSONPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 490mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
|
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PMCPB5530X,115 | Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 4A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 490mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PMCPB5530X,115 | Nexperia |
MOSFETs PMCPB5530X/SOT1118/HUSON6 |
товару немає в наявності |
В кошику од. на суму грн. |
| PMCPB5530X,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET N/P-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PMCPB5530X,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET N/P-CH 20V 4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PMCPB5530X,115 |
|
Виробник: Nexperia
MOSFETs PMCPB5530X/SOT1118/HUSON6
MOSFETs PMCPB5530X/SOT1118/HUSON6
товару немає в наявності
В кошику
од. на суму грн.