PMCPB5530XAX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 4.5A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис PMCPB5530XAX Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 4.5A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 490mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V, Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V, Supplier Device Package: 6-HUSON (2x2), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PMCPB5530XAX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PMCPB5530XAX | Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 4.5A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V Supplier Device Package: 6-HUSON (2x2) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PMCPB5530XAX | Nexperia |
MOSFETs PMCPB5530XA/SOT1118/HUSON6 |
товару немає в наявності |
В кошику од. на суму грн. |
| PMCPB5530XAX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 4.5A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 4.5A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, 785pF @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, 66mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, 13nC @ 4.5V
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PMCPB5530XAX |
|
Виробник: Nexperia
MOSFETs PMCPB5530XA/SOT1118/HUSON6
MOSFETs PMCPB5530XA/SOT1118/HUSON6
товару немає в наявності
В кошику
од. на суму грн.