| Кількість | Ціна |
|---|---|
| 8+ | 42.04 грн |
| 13+ | 25.70 грн |
| 100+ | 14.38 грн |
| 500+ | 10.89 грн |
| 1000+ | 8.80 грн |
| 2500+ | 8.38 грн |
| 5000+ | 7.26 грн |
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Технічний опис PMCXB1000UEZ Nexperia
Description: MOSFET N/P-CH 30V 0.59A 6DFN, Part Status: Active, Supplier Device Package: DFN1010B-6, Vgs(th) (Max) @ Id: 950mV @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V, Power - Max: 285mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR), Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta), Drain to Source Voltage (Vdss): 30V.
Інші пропозиції PMCXB1000UEZ за ціною від 16.82 грн до 47.13 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PMCXB1000UEZ | Nexperia USA Inc. |
 Description: MOSFET N/P-CH 30V 0.59A 6DFNPart Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 950mV @ 250µA Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 285mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V |
на замовлення 1412 шт: термін постачання 21-31 дні (днів) |
|
| PMCXB1000UEZ |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 30V 0.59A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 285mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V
Description: MOSFET N/P-CH 30V 0.59A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 285mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V
на замовлення 1412 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.13 грн |
| 11+ | 28.06 грн |
| 50+ | 20.41 грн |
| 100+ | 16.82 грн |