PMCXB290UEZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N/P-CH 20V 0.93A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW (Ta), 6W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V, 53.5pF @ 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010B-6
на замовлення 1842 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.92 грн |
| 17+ | 19.25 грн |
| 100+ | 12.18 грн |
| 500+ | 8.53 грн |
| 1000+ | 7.59 грн |
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Технічний опис PMCXB290UEZ Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.93A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 280mW (Ta), 6W (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V, 53.5pF @ 10V, Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 0.8nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN1010B-6.
Інші пропозиції PMCXB290UEZ за ціною від 6.31 грн до 34.56 грн
| Фото | Назва | Виробник | Інформація |
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PMCXB290UEZ | Виробник : Nexperia |
MOSFETs 20 V, complementary N/P-channel Trench MOSFET |
на замовлення 8340 шт: термін постачання 21-30 дні (днів) |
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PMCXB290UEZ | Виробник : Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 0.93A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 280mW (Ta), 6W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V, 53.5pF @ 10V Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 0.8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1010B-6 |
товару немає в наявності |