PMCXB900UEZ NXP Semiconductors

Description: MOSFET N/P-CH 20V 0.6A 6DFN, Supplier Device Package: DFN1010B-6, Vgs(th) (Max) @ Id: 950mV @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 265mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Bulk.