PMDPB30XNAX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 640mW (Ta), 11W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-HUSON (2x2)
| Кількість | Ціна |
|---|---|
| 6+ | 58.13 грн |
| 10+ | 34.65 грн |
| 50+ | 25.28 грн |
| 100+ | 20.88 грн |
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Технічний опис PMDPB30XNAX Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4.5A 6HUSON, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 6-HUSON (2x2), Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc), Drain to Source Voltage (Vdss): 20V, Power - Max: 640mW (Ta), 11W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-UFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції PMDPB30XNAX
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
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PMDPB30XNAX | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 4.5A 6HUSON Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 6-HUSON (2x2) Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 640mW (Ta), 11W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
 |
PMDPB30XNAX | Nexperia |
MOSFETs 20 V, dual N-channel Trench MOSFET |
товару немає в наявності |
Мінімальне замовлення: 7 шт В кошику од. на суму грн. |
| PMDPB30XNAX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-HUSON (2x2)
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 640mW (Ta), 11W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 4.5A 6HUSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-HUSON (2x2)
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 640mW (Ta), 11W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMDPB30XNAX |
|
Виробник: Nexperia
MOSFETs 20 V, dual N-channel Trench MOSFET
MOSFETs 20 V, dual N-channel Trench MOSFET
товару немає в наявності
Мінімальне замовлення: 7 шт
В кошику
од. на суму грн.