PMDPB56XN,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 3.1A 6HUSON
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 510mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Bulk
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Технічний опис PMDPB56XN,115 Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 3.1A 6HUSON, Supplier Device Package: 6-HUSON (2x2), Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V, Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 3.1A, Drain to Source Voltage (Vdss): 30V, Power - Max: 510mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Bulk.