PMDPB58UPE,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Description: MOSFET 2P-CH 20V 3.6A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 515mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.36 грн |
6000+ | 8.56 грн |
9000+ | 7.95 грн |
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Технічний опис PMDPB58UPE,115 Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3.6A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 515mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.6A, Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V, Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 6-HUSON (2x2).
Інші пропозиції PMDPB58UPE,115 за ціною від 7.66 грн до 30.38 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PMDPB58UPE,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 3.6A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 515mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 6-HUSON (2x2) |
на замовлення 16649 шт: термін постачання 21-31 дні (днів) |
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PMDPB58UPE,115 | Виробник : Nexperia | MOSFET PMDPB58UPE/SOT1118/HUSON6 |
на замовлення 31159 шт: термін постачання 21-30 дні (днів) |
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PMDPB58UPE,115 | Виробник : NEXPERIA | Trans MOSFET P-CH 20V 4.5A 6-Pin HUSON EP T/R |
товар відсутній |
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PMDPB58UPE,115 | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Pulsed drain current: -14.4A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±8V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
товар відсутній |
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PMDPB58UPE,115 | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -2.3A; Idm: -14.4A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Pulsed drain current: -14.4A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±8V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |