Технічний опис PMDPB65UP,115 NXP Semiconductors
Description: MOSFET 2P-CH 20V 3.5A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 520mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V, Rds On (Max) @ Id, Vgs: 70mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-HUSON (2x2).
Інші пропозиції PMDPB65UP,115
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PMDPB65UP,115 | Виробник : NXP USA Inc. |
 Description: MOSFET 2P-CH 20V 3.5A 6HUSONPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 520mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-HUSON (2x2) |
товару немає в наявності |
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PMDPB65UP,115 | Виробник : NXP USA Inc. |
Description: MOSFET 2P-CH 20V 3.5A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 520mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-HUSON (2x2) |
товару немає в наявності |