PMDPB70EN,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 3.5A 6HUSON
Packaging: Bulk
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 15V
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
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Технічний опис PMDPB70EN,115 Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 3.5A 6HUSON, Packaging: Bulk, Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 510mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 15V, Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-HUSON (2x2).