| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.82 грн |
| 12+ | 27.23 грн |
| 100+ | 14.01 грн |
| 500+ | 11.60 грн |
| 1000+ | 9.66 грн |
| 3000+ | 8.15 грн |
| 6000+ | 7.52 грн |
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Технічний опис PMDPB70XPE,115 Nexperia
Description: MOSFET 2P-CH 20V 3A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 515mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-HUSON (2x2), Part Status: Active.
Інші пропозиції PMDPB70XPE,115 за ціною від 18.99 грн до 53.59 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PMDPB70XPE,115 | Nexperia USA Inc. |
 Description: MOSFET 2P-CH 20V 3A 6HUSONPart Status: Active Supplier Device Package: 6-HUSON (2x2) Vgs(th) (Max) @ Id: 1.25V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3A Drain to Source Voltage (Vdss): 20V Power - Max: 515mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3004 шт: термін постачання 21-31 дні (днів) |
|
| PMDPB70XPE,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 3A 6HUSON
Part Status: Active
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 515mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 3A 6HUSON
Part Status: Active
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 515mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3004 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.59 грн |
| 10+ | 31.63 грн |
| 50+ | 23.02 грн |
| 100+ | 18.99 грн |