PMDPB80XP,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 2.7A 6HUSON
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Power - Max: 485mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис PMDPB80XP,115 Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 2.7A 6HUSON, Supplier Device Package: 6-HUSON (2x2), Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, 1.8V Drive, Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A, Drain to Source Voltage (Vdss): 20V, Power - Max: 485mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-UFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції PMDPB80XP,115
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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PMDPB80XP,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 2.7A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 485mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-HUSON (2x2) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
PMDPB80XP,115 | Nexperia |
MOSFET 20V, Dual P-Channel Trench MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| PMDPB80XP,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 2.7A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Description: MOSFET 2P-CH 20V 2.7A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
товару немає в наявності
В кошику
од. на суму грн.
| PMDPB80XP,115 |
|
Виробник: Nexperia
MOSFET 20V, Dual P-Channel Trench MOSFET
MOSFET 20V, Dual P-Channel Trench MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.