PMDPB85UPE,115 NEXPERIA

Description: MOSFET 2P-CH 20V 2.9A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 515mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 10V, Rds On (Max) @ Id, Vgs: 103mOhm @ 1.3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 6-HUSON (2x2).