PMDPB95XNE,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 30V 2.4A 6HUSON
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 475mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 4438+ | 5.19 грн |
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Технічний опис PMDPB95XNE,115 NXP USA Inc.
Description: MOSFET 2N-CH 30V 2.4A 6HUSON, Supplier Device Package: 6-HUSON (2x2), Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 2.4A, Drain to Source Voltage (Vdss): 30V, Power - Max: 475mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції PMDPB95XNE,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PMDPB95XNE,115 | NXP USA Inc. |
Description: MOSFET 2N-CH 30V 2.4A 6HUSON Supplier Device Package: 6-HUSON (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V Current - Continuous Drain (Id) @ 25°C: 2.4A Drain to Source Voltage (Vdss): 30V Power - Max: 475mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| PMDPB95XNE,115 |
|
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 30V 2.4A 6HUSON
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 475mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 2.4A 6HUSON
Supplier Device Package: 6-HUSON (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 475mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.