PMDT290UCE,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.8A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Відгуки про товар
Написати відгук
Технічний опис PMDT290UCE,115 Nexperia USA Inc.
Description: NEXPERIA - PMDT290UCE,115 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.29 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 800mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 800mA, Drain-Source-Durchgangswiderstand, p-Kanal: 0.29ohm, Verlustleistung, p-Kanal: 330mW, Drain-Source-Spannung Vds, n-Kanal: 20V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SOT-666, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 330mW, Betriebstemperatur, max.: 150°C.
Інші пропозиції PMDT290UCE,115
| Фото | Назва | Виробник | Інформація | Доступність | _PRICE_WITHOUT_VAT | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PMDT290UCE,115 | Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 0.8A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-666 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8784 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
PMDT290UCE,115 | NEXPERIA |
Description: NEXPERIA - PMDT290UCE,115 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.29 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 800mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 800mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.29ohm Verlustleistung, p-Kanal: 330mW Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-666 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 330mW Betriebstemperatur, max.: 150°C |
на замовлення 5505 шт: термін постачання 21-31 дні (днів) |
|
| PMDT290UCE,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.8A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 20V 0.8A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8784 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.28 грн |
| 14+ | 22.21 грн |
| 100+ | 14.16 грн |
| 500+ | 9.99 грн |
| 1000+ | 8.93 грн |
| 2000+ | 8.03 грн |
| PMDT290UCE,115 |
|
Виробник: NEXPERIA
Description: NEXPERIA - PMDT290UCE,115 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.29 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 800mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 800mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.29ohm
Verlustleistung, p-Kanal: 330mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-666
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 330mW
Betriebstemperatur, max.: 150°C
Description: NEXPERIA - PMDT290UCE,115 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.29 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 800mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 800mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.29ohm
Verlustleistung, p-Kanal: 330mW
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-666
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 330mW
Betriebstemperatur, max.: 150°C
на замовлення 5505 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 49.61 грн |
| 27+ | 30.52 грн |
| 100+ | 19.57 грн |
| 500+ | 13.61 грн |
| 1000+ | 11.25 грн |
| 5000+ | 9.39 грн |