PMDT290UCEH Nexperia USA Inc.

Description: MOSFET N/P-CH 20V 0.8A SOT666, Grade: Automotive, Qualification: AEC-Q101, Part Status: Not For New Designs, Supplier Device Package: SOT-666, Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V, 1.14nC @ 4.5V, Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V, 87pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 330mW (Ta), 1.09W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).