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Технічний опис PMDXB1200UPEZ Nexperia
Description: MOSFET 2P-CH 30V 0.41A 6DFN, Part Status: Active, Supplier Device Package: DFN1010B-6, Vgs(th) (Max) @ Id: 950mV @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 410mA, Drain to Source Voltage (Vdss): 30V, Power - Max: 285mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції PMDXB1200UPEZ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PMDXB1200UPEZ | Nexperia USA Inc. |
 Description: MOSFET 2P-CH 30V 0.41A 6DFNPart Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V Current - Continuous Drain (Id) @ 25°C: 410mA Drain to Source Voltage (Vdss): 30V Power - Max: 285mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
PMDXB1200UPEZ | Nexperia USA Inc. |
Description: MOSFET 2P-CH 30V 0.41A 6DFN Part Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V Current - Continuous Drain (Id) @ 25°C: 410mA Drain to Source Voltage (Vdss): 30V Power - Max: 285mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| PMDXB1200UPEZ |
|
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 30V 0.41A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 285mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 30V 0.41A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 285mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PMDXB1200UPEZ |
|
Виробник: Nexperia USA Inc.
Description: MOSFET 2P-CH 30V 0.41A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 285mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 30V 0.41A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 285mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.