PMEG100T20ELPX NXP Semiconductors
Виробник: NXP Semiconductors
Description: PMEG100T20ELP - 100 V, 2 A low l
Packaging: Bulk
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 µA @ 100 V
Description: PMEG100T20ELP - 100 V, 2 A low l
Packaging: Bulk
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 µA @ 100 V
на замовлення 7781 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
3000+ | 7.96 грн |
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Технічний опис PMEG100T20ELPX NXP Semiconductors
Description: PMEG100T20ELP - 100 V, 2 A low l, Packaging: Bulk, Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 12 ns, Technology: Schottky, Capacitance @ Vr, F: 200pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-128/CFP5, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A, Current - Reverse Leakage @ Vr: 1.25 µA @ 100 V.
Інші пропозиції PMEG100T20ELPX
Фото | Назва | Виробник | Інформація |
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PMEG100T20ELPX | Виробник : Nexperia |
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