на замовлення 19876 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.87 грн |
| 14+ | 22.99 грн |
| 100+ | 9.3 грн |
| 1000+ | 7.24 грн |
| 3000+ | 5.78 грн |
| 9000+ | 5.58 грн |
| 24000+ | 5.31 грн |
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Технічний опис PMEG120G10ELRX Nexperia
Description: DIODE SIGE 120V 1A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 12 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 36pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 120 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A, Current - Reverse Leakage @ Vr: 30 nA @ 120 V.
Інші пропозиції PMEG120G10ELRX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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PMEG120G10ELRX | Виробник : NEXPERIA |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: silicon germanium diode (SiGe) Case: SOD123W Max. off-state voltage: 120V Max. forward voltage: 0.77V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 12ns Max. forward impulse current: 50A Leakage current: 30nA кількість в упаковці: 1 шт |
товар відсутній |
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PMEG120G10ELRX | Виробник : Nexperia USA Inc. |
Description: DIODE SIGE 120V 1A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 36pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V |
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PMEG120G10ELRX | Виробник : Nexperia USA Inc. |
Description: DIODE SIGE 120V 1A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 36pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V |
товар відсутній |
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PMEG120G10ELRX | Виробник : NEXPERIA |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: silicon germanium diode (SiGe) Case: SOD123W Max. off-state voltage: 120V Max. forward voltage: 0.77V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 12ns Max. forward impulse current: 50A Leakage current: 30nA |
товар відсутній |