Технічний опис PMEG120G10ELRZ NEXPERIA
Description: DIODE SIGE 120V 1A CFP3, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 6 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 36pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: CFP3, Operating Temperature - Junction: 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 120 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A, Current - Reverse Leakage @ Vr: 30 nA @ 120 V.
Інші пропозиції PMEG120G10ELRZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PMEG120G10ELRZ | Виробник : Nexperia USA Inc. |
 Description: DIODE SIGE 120V 1A CFP3Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 36pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: CFP3 Operating Temperature - Junction: 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V |
товару немає в наявності |