Технічний опис PMEG120G30ELPJ NEXPERIA
Description: DIODE SIGE 120V 3A SOD128/CFP5, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 11 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 103pF @ 1V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: SOD-128/CFP5, Operating Temperature - Junction: 175°C (Max), Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 120 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A, Current - Reverse Leakage @ Vr: 30 nA @ 120 V.
Інші пропозиції PMEG120G30ELPJ
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PMEG120G30ELPJ | Виробник : Nexperia USA Inc. |
Description: DIODE SIGE 120V 3A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 103pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V |
товару немає в наявності |
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PMEG120G30ELPJ | Виробник : Nexperia |
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товару немає в наявності |