| Кількість | Ціна |
|---|---|
| 10+ | 33.32 грн |
| 12+ | 27.46 грн |
| 100+ | 16.27 грн |
| 500+ | 12.78 грн |
| 1000+ | 10.75 грн |
| 3000+ | 10.06 грн |
| 6000+ | 9.36 грн |
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Технічний опис PMEG120G30ELPX Nexperia
Description: DIODE SIGE 120V 3A SOD128/CFP5, Current - Reverse Leakage @ Vr: 30 nA @ 120 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 120 V, Part Status: Active, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: SOD-128/CFP5, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 103pF @ 1V, 1MHz, Technology: SiGe (Silicon Germanium), Reverse Recovery Time (trr): 11 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-128, Packaging: Tape & Reel (TR).
Інші пропозиції PMEG120G30ELPX
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
PMEG120G30ELPX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 3A SOD128/CFP5 Current - Reverse Leakage @ Vr: 30 nA @ 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 120 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: SOD-128/CFP5 Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 103pF @ 1V, 1MHz Technology: SiGe (Silicon Germanium) Reverse Recovery Time (trr): 11 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
PMEG120G30ELPX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 3A SOD128/CFP5 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 103pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V |
товару немає в наявності |
В кошику од. на суму грн. |
| PMEG120G30ELPX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 3A SOD128/CFP5
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-128/CFP5
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 11 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: DIODE SIGE 120V 3A SOD128/CFP5
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-128/CFP5
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 11 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| PMEG120G30ELPX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Description: DIODE SIGE 120V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
товару немає в наявності
В кошику
од. на суму грн.



