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Технічний опис PMEG150G10ELRX Nexperia
Description: DIODE SIGE 150V 1A SOD123W, Current - Reverse Leakage @ Vr: 30 nA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 150 V, Part Status: Active, Operating Temperature - Junction: 175°C, Supplier Device Package: SOD-123W, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 34pF @ 1V, 1MHz, Technology: SiGe (Silicon Germanium), Reverse Recovery Time (trr): 15 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123W, Packaging: Tape & Reel (TR).
Інші пропозиції PMEG150G10ELRX
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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PMEG150G10ELRX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 1A SOD123W Current - Reverse Leakage @ Vr: 30 nA @ 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 34pF @ 1V, 1MHz Technology: SiGe (Silicon Germanium) Reverse Recovery Time (trr): 15 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
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PMEG150G10ELRX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 1A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 34pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. |
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PMEG150G10ELRX | NEXPERIA |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 150V; 1A; 15ns; SOD123W; Ufmax: 0.78V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 150V Load current: 1A Reverse recovery time: 15ns Semiconductor structure: single diode Features of semiconductor devices: silicon germanium diode (SiGe) Case: SOD123W Max. forward voltage: 0.78V Max. forward impulse current: 50A Leakage current: 30nA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. |
| PMEG150G10ELRX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 150V 1A SOD123W
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Description: DIODE SIGE 150V 1A SOD123W
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| PMEG150G10ELRX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| PMEG150G10ELRX |
|
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SOD123W; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.78V
Max. forward impulse current: 50A
Leakage current: 30nA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SOD123W; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: silicon germanium diode (SiGe)
Case: SOD123W
Max. forward voltage: 0.78V
Max. forward impulse current: 50A
Leakage current: 30nA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.