PMEG3002AELD,315 Nexperia
| Кількість | Ціна |
|---|---|
| 11+ | 30.14 грн |
| 17+ | 19.03 грн |
| 50+ | 11.38 грн |
| 100+ | 9.92 грн |
| 1000+ | 6.98 грн |
| 2500+ | 6.08 грн |
| 5000+ | 4.89 грн |
Відгуки про товар
Написати відгук
Технічний опис PMEG3002AELD,315 Nexperia
Description: DIODE SCHOTT 30V 200MA DFN1006D2, Packaging: Tape & Reel (TR), Package / Case: 2-XDFN, Mounting Type: Surface Mount, Wettable Flank, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 6 ns, Technology: Schottky, Capacitance @ Vr, F: 25pF @ 1V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: DFN1006D-2, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA, Current - Reverse Leakage @ Vr: 50 µA @ 30 V, Qualification: AEC-Q101.
Інші пропозиції PMEG3002AELD,315
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
PMEG3002AELD,315 | Nexperia USA Inc. |
Description: DIODE SCHOTT 30V 200MA DFN1006D2Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Schottky Capacitance @ Vr, F: 25pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DFN1006D-2 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
|
PMEG3002AELD,315 | Nexperia USA Inc. |
Description: DIODE SCHOTT 30V 200MA DFN1006D2Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Schottky Capacitance @ Vr, F: 25pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DFN1006D-2 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| PMEG3002AELD,315 | NXP USA Inc. |
Description: DIODE SCHOTTKY 30V 0.2A SOD882DPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| PMEG3002AELD,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTT 30V 200MA DFN1006D2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006D-2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTT 30V 200MA DFN1006D2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006D-2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PMEG3002AELD,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTT 30V 200MA DFN1006D2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006D-2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTT 30V 200MA DFN1006D2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006D-2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.




